论文标题
二维硅碳化物单层中量子发射器的理论研究
Theoretical study of quantum emitters in two-dimensional silicon carbide monolayer
论文作者
论文摘要
通过AB-Initio计算和组理论分析研究了二维硅单层单层中某些潜在单光子源的特征。考虑了三个电荷状态（负，正和中性）中的一些点缺陷。通过应用性能标准，可以详细研究没有抗岩缺陷的石 - 韦尔缺陷。地层能量计算表明，这些缺陷的中性和正电荷态稳定。我们计算了不同电荷状态下可用过渡的零频线能量，黄-rhys（HR）因子（HR）因子和光致发光光谱。计算出的HR值和相关的Debye-Waller因子确保石 - 孔缺陷具有很高的表现为有希望的单光子发射极的潜力。
The features of some potential single-photon sources in two-dimensional silicon carbide monolayers is studied via ab-initio calculation and group theory analysis. A few point defects in three charge states (negative, positive and neutral) are considered. By applying performance criteria, Stone-Wales defects without and with combination of antisite defects are studied in details. The formation energy calculations reveal that neutral and positive charge states of these defects are stable. We compute the zero-phonon-line energy, the Huang-Rhys (HR) factor and the photoluminescence spectrum for the available transitions in different charge states. The calculated HR values and the related Debye-Waller factors guarantee that the Stone-Wales defects have a high potential of performing as a promising single-photon emitter.
