论文标题
半导体设备中电子和孔的时间周期性流动
Time-periodic flows of electrons and holes in semiconductor devices
论文作者
论文摘要
本文的主要目的是对半导体中电子和孔的时间周期流进行数学分析。这些流程出现在将交替电流电压应用于设备的情况下。在本文中，我们研究了三维有限域中半导体的漂移扩散模型，并研究了时间周期溶液的存在和稳定性。我们首先得出了时间全球溶液的均匀估计值，然后通过相对熵方法证明，随着时间的时间趋向于无穷大，任何两种溶液的差异都会迅速衰减。这些事实使我们能够展示时间周期解决方案的独特存在和全球稳定性。
The main purpose of this paper is mathematical analysis on time-periodic flows of electrons and holes in semiconductors. The flows appear in a situation that alternating-current voltages are applied to devices. In this paper, we study the drift-diffusion model for semiconductors in a three-dimensional bounded domain and investigate the existence and stability of time-periodic solutions. We first derive the uniform-in-time estimate of time-global solutions, and then prove by the relative entropy method that the difference of any two solutions decays exponentially fast as time tends to infinity. These facts enable us to show the unique existence and global stability of time-periodic solution.
