论文标题
研究Cu箔取向在由反应性RF磁控溅射合成的大型BN膜生长中的作用
Investigating the role of Cu foil orientation in the growth of large BN films synthesized by reactive RF magnetron sputtering
论文作者
论文摘要
二维材料是一种新兴材料类，它正在以惊人的范围转变当今的研究活动。六角硼硝化物是一种宽带隙2D材料，是基于石墨烯电子产品的绝佳基材。为了实现HBN可扩展和高产量增长程序的全部潜力。在这里，我们通过反应性R.F磁控蛋白溅射在铜箔上的反应性R.F磁子溅射来证明HBN的合成。铜箔制备条件决定了BN膜的相位选择性。 HBN沉积在具有主要主导（100）方向的非电po po po的cu箔上导致BN岛具有混合立方体和六边形BN相的生长。在具有高对称性六角形（111）表面终止的电po poply Cu箔上，我们获得了连续的六角型BN膜的生长，而在具有（100）和（110）方向的CU箔上，观察到了立方BN膜的对称性较低的对称性。
Two dimensional materials are an emerging class of materials which is transforming the present day research activity on a phenomenal scale. Hexagonal boron nitride is a wide band gap 2D material which is an excellent substrate for graphene based electronics. To achieve the full potential of hBN scalable and high yield growth procedures are required. Here, we demonstrate the synthesis of hBN by reactive R.F magnetron sputtering over copper foil. Copper foil preparation conditions determines the phase selectivity of BN films. Deposition of hBN on non-electropolished Cu foils with predominant (100) orientation resulted in growth of BN islands with mixed cubic and hexagonal BN phase. On electropolished Cu foils with high symmetry hexagonal (111) surface termination we get growth of continuous hexagonal BN films, while on Cu foils having (100) and (110) orientation with lower symmetry growth of cubic BN films are observed.
