论文标题
石墨烯中接近诱导的磁化：朝着有效的自旋门控
Proximity-induced magnetization in graphene: Towards efficient spin gating
论文作者
论文摘要
通过将其与金属的铁磁体接触，可以通过磁接近效应在室温下在石墨烯中诱导栅极可调的自旋依赖性特性。由于与金属底物的牢固化学键使门控无效，因此需要一个间钝化层。先前认为的钝化层导致狄拉克点远离费米水平的大幅移动，因此需要不切实际的大门场来调整石墨烯中的自旋极化。我们表明，Au或Pt的单层用作CO和石墨烯之间的钝化层，使Dirac点更接近Fermi水平。在\ co/\ pt/\ gr系统中，通过在费米水平附近的表面带的存在强烈增强了石墨烯中的接近诱导的自旋极化，其栅极控制会大大增强。此外，可以通过在钝化层中选择子单层覆盖范围来完全消除狄拉点的移位。我们的发现为具有栅极可调旋转依赖性特性的优化二维系统实现实现实现的途径。
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene. We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the \Co/\Pt/\Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.
