论文标题
线性烷基苯硅光电培养基的反射率
Reflectance of Silicon Photomultipliers in Linear Alkylbenzene
论文作者
论文摘要
硅光电塑料（SIPM）的反射率是了解大型基于SIPM的检测器系统并评估SIPMS的性能的重要方面。我们报告了由Fondazione Bruno Kessler（FBK）和Hamamatsu Photonics K.K.生产的两个sipms，Nuv-HD-LowCT和S14160-60-50HS的反射率。 （HPK）分别在线性烷基苯（实验室）和可见波长下的空气中。我们的结果表明，FBK SIPM在空气中的反射率在14％至23％的范围内变化，具体取决于波长和入射角，比HPK设备大2次。这表明这两个制造商正在使用sipms表面上的抗反射涂层设计。与在空气中测得的相比，当SIPM浸入实验室中时，反射率降低了约10％。反射光束的轮廓也通过用于两个sipms的电荷耦合设备（CCD）摄像头测量。
Reflectance of silicon photomultipliers (SiPMs) is an important aspect to understand the large scale SiPM-based detector systems and evaluate the performance of SiPMs. We report the reflactance of two SiPMs, NUV-HD-lowCT and S14160-60-50HS manufactured by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) respectively, in linear alkylbenzene (LAB) and in air at visible wavelengths. Our results show that the reflectance of the FBK SiPM in air varies in the range of 14% to 23% , depending on wavelengths and angle of incidence, which is 2 time larger than that of the HPK device. This indicates that the two manufacturers are using different designs of anti-reflective coating on SiPMs' surfaces. The reflectance is reduced by about 10% when SiPMs are immersed in LAB, compared with that measured in air. The profiles of reflected light beams are also measured by a charge-coupled device (CCD) camera for the two SiPMs.
