论文标题
INSB量子井中的电子G因子和磁通
Electronic g-factor and Magneto-transport in InSb Quantum Wells
论文作者
论文摘要
通过相对于样品正常样品的磁场中的传输实验，研究了具有可调载体密度的高迁移率INSB量子孔。我们采用了巧合方法和shubnikov-de haas振荡的温度依赖性，并找到了$ \中g^{\ ast} \ mid $ = 35 $ = 35 $ \ pm $ 4的有效g因子的价值，有效质量为$ m_0 $ m_0 $ $ m_0 $ s facue ins facue ins facue ins facue ins facue。我们的测量值在磁场和密度范围内进行，其中可以忽略有效G因子的增强机理。因此，可以在单个粒子图片中定量解释获得的有效G因子和有效质量。此外，我们还探索了35吨磁场的磁通电场，并且找不到与分数量子霍尔效应相关的特征。
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
