论文标题
Zngen2在GAN缓冲液上使用分子束支配在GAN缓冲液上的杂次整合
Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy
论文作者
论文摘要
最近，基于当前商业化的（ga）n设备的理论化混合II-IV-N {_2} / III-N异质结构可显着提高可见光频谱中高效光电的设计空间，但在II-IV-N {_2}材料的同际研究中很少。在这项工作中，我们介绍了在gan缓冲液和ALN模板上生长的异质epitaxial Zngen {_2}。我们证明了GAN成核表面对于将Zngen {_2}结晶速率提高到对抗Zn解吸至关重要，从而将stoichiementric生长窗口从Aln上的215 {\ geger} C扩展到GAN缓冲液的215 {\ guger} c。结构表征揭示了良好的结晶膜，并从GAN缓冲液延伸的螺纹位错。通过反射高能电子衍射（RHEED）和横截面扫描电子显微镜（SEM）确定，这些薄膜具有临界厚度，可放松20 nm -25 nm。这些薄膜具有阳离子排序的Wurtzite结构，其晶格常数a =3.216Å{\ pm}0.004Å和C =5.215Å{\ pm}0.005Å由RHEED和X射线衍射（XRD）确定。这项工作展示了朝着混合Zngen {_2} -gan集成设备开发的重要一步。
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N{_2} materials. In this work, we present heteroepitaxial ZnGeN{_2} grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN{_2} crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 {\degree}C on AlN to 500 {\degree}C on GaN buffers. Structural characterization reveals well crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20 nm - 25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 Å {\pm} 0.004 Å and c = 5.215 Å {\pm} 0.005 Å determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step towards the development of hybrid ZnGeN{_2}-GaN integrated devices.
