论文标题
在电子掺杂的磁性Weyl半含量中，内在异常霍尔电导的内在异常电导的升高
Disorder-Induced Elevation of Intrinsic Anomalous Hall Conductance in an Electron-Doped Magnetic Weyl Semimetal
论文作者
论文摘要
由于其独特的带式转换特征和带状点，拓扑材料有望显示出不同的传输特征。但是，通过实验可行的手段对这种拓扑响应的故意调节的探索较少。在这里，在电子（Ni）掺杂的磁性Weyl半含CO3-XNIXSN2S2中获得异常大厅效应（AHE）的异常升高，显示出相对较低的掺杂水平x = 0.11，显示异常的霍尔德电导性，霍尔 - 角和霍尔因子的峰值。使用TYJ缩放模型对总AHE的内在和外在贡献的分离表明，这种显着的增强是由电子浆果曲率的固有机制所支配的。理论计算表明，与电子填充物的费米级转移相比，通常被忽略的掺杂效应，即局部疾病，对宽阔的隙和缩小倒置的间隙造成了惊人的影响，从而导致综合浆果曲率的升高。我们的结果不仅实现了磁性Weyl半分化中AHE的增强，而且还提供了实用的设计原理来通过利用掺杂的障碍效应来调节拓扑材料中的频带和传输性能。
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible means is less explored. Here, an unusual elevation of anomalous Hall effect (AHE) is obtained in electron(Ni)-doped magnetic Weyl semimetal Co3-xNixSn2S2, showing peak values of anomalous Hall-conductivity, Hall-angle and Hall-factor at a relatively low doping level of x = 0.11. The separation of intrinsic and extrinsic contributions to total AHE using TYJ scaling model indicates that such significant enhancement is dominated by the intrinsic mechanism of electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, i.e., local disorder, imposes a striking effect on broadening the bands and narrowing the inverted gap, and thus results in an elevation of the integrated Berry curvature. Our results not only realize the enhancement of AHE in a magnetic Weyl semimetal, but also provide a practical design principle to modulate the bands and transport properties in topological materials, by exploiting the disorder effect of doping.
