论文标题

共掺杂的钻石中的双重收费硅空置中心,光色素和Si-N复合物

Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond

论文作者

Breeze, B G, Meara, C J, Wu, X X, Michaels, C P, Gupta, R, Diggle, P L, Dale, M W, Cann, B L, Ardon, T, D'Haenens-Johansson, U F S, Friel, I, Rayson, M J, Briddon, P R, Goss, J P, Newton, M E, Green, B L

论文摘要

我们报告了硅和氮共掺杂样品中钻石,SIV2-的双重缺陷的第一个实验性观察。我们测量钻石中替代硅的光谱特征,并鉴定出用理论计算支持的用最近的邻居氮SIVN装饰的硅胶合复合物。含有硅和氮的样品被证明是光色素的,由于SIV0/ - 的损失而具有显着的可见变化,并且在光学不活跃的SIV2-中获得了增益。

We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.

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