论文标题
石墨烯用于电子结构修饰的栅极控制的光氧化
Gate-controlled photo-oxidation of graphene for electronic structure modification
论文作者
论文摘要
石墨烯是一种超薄材料，它使我们能够通过田间效应门控控制表面现象。在各种表面现象中，光氧化是一种在很大程度上控制石墨烯的电子结构的便利方法。在这项研究中，使用现场效应 - 透射式配置对石墨烯光氧化的栅极可控性进行了彻底检查。水分子的存在增强了栅极可控性，可以使用水氧共吸吸收图片来解释。另外，光氧化反应从边缘演变，并朝石墨烯通道的中心进行，可以通过边缘场效应来理解。半导体特性通过缩小石墨烯通道成功获得，这表明可能在温和条件下，即在室温下在空气中形成石墨烯纳米苯。
Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of graphene. In this study, gate controllability of photo-oxidation of graphene is thoroughly examined using a field-effect-transistor configuration. The presence of water molecules enhances gate controllability, which can be explained using water-oxygen co-adsorption picture. In addition, the photo-oxidation reaction evolves from the edge and proceeds towards the center of the graphene channel, which can be understood by the fringing field effect. Semiconducting characteristics are successfully obtained by narrowing of the graphene channel, suggesting possible formation of a graphene nanoribbon under mild conditions, i.e., in air at room temperature.
