论文标题
工程金属 - $ sp_ {xy} $ dirac乐队在氧化的SIC表面上
Engineering metal-$sp_{xy}$ Dirac bands on the oxidized SiC surface
论文作者
论文摘要
构建2D系统的能力，除了材料自然形成之外，还丰富了新现象的搜索和控制能力。例如，通过扫描隧道显微镜合成金属表面上空缺的拓扑晶格。在本研究中，我们证明了在硅酸盐碳化物上包围的金属原子是碳化硅设计的有趣平台，为在绝缘底物上实验构建紧密结合模型提供了一个地面。基于密度功能理论，我们表征了嵌入在二氧化硅adlayer中的2D金属晶格的能量和电子特性。我们表明，这些格子的特征带结构是由由宿主$ p_ {xy} $ states构造的金属$ s $轨道诱导的表面状态统治的；产生$ sp_ {xy} $ dirac频段整齐地位于半导体基板的能量间隙内。
The ability to construct 2D systems, beyond materials natural formation, enriches the search and control capability of new phenomena. For instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study we demonstrate that metal atoms encaged in silicate adlayer on silicon carbide is an interesting platform for lattices design, providing a ground to experimentally construct tight-binding models on an insulating substrate. Based on the density functional theory, we have characterized the energetic and the electronic properties of 2D metal lattices embedded in the silica adlayer. We show that the characteristic band structures of those lattices are ruled by surface states induced by the metal-$s$ orbitals coupled by the host-$p_{xy}$ states; giving rise to $sp_{xy}$ Dirac bands neatly lying within the energy gap of the semiconductor substrate.
