论文标题
在原位加热期间GE2SB2TE5薄膜中的化学分离
Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating
论文作者
论文摘要
也会使用也研究的也广泛使用，是晶也研究的相位变化材料，这是由于其合适的结晶温度，与晶体耐药性对比度的无定形以及无定形相的稳定性，因此是电子记忆中最常用和研究的相变材料。在这项工作中，在透射电子显微镜内部加热过程中，GE2SB2TE5膜中GE的分离被观察并表征。 GE2SB2TE5膜是使用Protochips Fusion持有器上的溅射沉积的，并在大气中放置了大约四个月。在膜中纳入的氧气在观察到的化学隔离中发挥了重要作用，这导致了无定形的Ge-O晶界以及SB和TE富含晶体结构域。当相变材料界面在集成装置中绝缘氧化物层并显着影响其电气和热性能时，可能会发生这种组成变化。
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O grain boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and would significantly impact its electrical and thermal properties.
