论文标题
基于截短的EATON镜头，通过改变引导层厚度，基于截短的EATON镜头，超薄硅在绝缘子的波导弯曲
Ultra-thin silicon-on-insulator waveguide bend based on truncated Eaton lens implemented by varying the guiding layer thickness
论文作者
论文摘要
硅启用器（SOI）波导具有不同几何形状的波导来设计各种集成的光学组件。减少弯曲损失较低的SOI波导的弯曲半径对于最大程度地减少轻波电路的足迹至关重要。繁殖模式不局限于超薄SOI波导的核心，并渗透到底物和覆层上，与传统的SOI波导相比，弯曲损失更高，而较厚的引导层。尽管已利用各种弯曲机制来减少常规SOI波导的弯曲损失，但尚未详细研究超薄的SOI波导弯曲。在本文中，我们根据引导层的厚度变化，提出了一个60 nm厚的Soi波导弯曲弯曲。三维全波模拟表明，在1550 nm的波长下，设计的波导弯曲半径为3.9 $ $ $ $，可将弯曲损失从3.3降低到0.42 dB。此外，波长1260-1675 nm的弯曲损耗低于0.67 dB，而C波段的弯曲损耗低于0.45 dB。
Silicon-on-insulator (SOI) waveguides with different geometries have been employed to design various integrated optical components. Reducing the bending radius of the SOI waveguides with low bending loss is essential in minimizing the footprint of light-wave circuits. The propagating mode is less confined in the core of the ultra-thin SOI waveguide and penetrates to substrate and cladding, leading to higher bending loss compared with conventional SOI waveguide with the thicker guiding layer. While various bending mechanisms have been utilized to reduce the bending loss of conventional SOI waveguides, the ultra-thin SOI waveguide bends have not been studied in detail. In this paper, we present a 60 nm-thick SOI waveguide bend based on the truncated Eaton lens implemented by varying thickness of the guiding layer. The three-dimensional full-wave simulations reveal that the designed waveguide bend, with a radius of 3.9 $μm$, reduces the bending loss from 3.3 to 0.42 dB at the wavelength of 1550 nm. Moreover, the bending loss for the wavelength range of 1260-1675 nm is lower than 0.67 dB while the bending loss in the C-band is lower than 0.45 dB.
