论文标题

研究纯晶体中核后坐力的电离效率

Study of the ionization efficiency for nuclear recoils in pure crystals

论文作者

Sarkis, Youssef, Aguilar-Arevalo, Alexis, D'Olivo, Juan Carlos

论文摘要

我们研究了Lindhard理论中的基本积分方程,描述了当考虑原子结合能时,纯材料中的核反冲能量给出了原子运动的能量。数值解决方案仅取决于速度 - 比例电子停止功率和结合能的斜率,因此导致对电离效率的估计,这与SI和GE的可用实验测量非常吻合。在该模型中,核后坐力的淬灭因子的截止能量在等于假定的结合能的两倍的能量上。我们认为,即使对于接近截止的能量,该模型也是GE的合理近似值,而对于SI来说,对于大于〜500 eV的后座能有效。

We study the basic integral equation in Lindhard's theory describing the energy given to atomic motion by nuclear recoils in a pure material when the atomic binding energy is taken into account. The numerical solution, which depends only on the slope of the velocity-proportional electronic stopping power and the binding energy, leads to an estimation of the ionization efficiency which is in good agreement with the available experimental measurements for Si and Ge. In this model, the quenching factor for nuclear recoils features a cut-off at an energy equal to twice the assumed binding energy. We argue that the model is a reasonable approximation for Ge even for energies close to the cutoff, while for Si is valid up to recoil energies greater than ~500 eV.

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