论文标题
通过过渡金属掺杂在WS2场效应晶体管中通过过渡金属掺杂增强的载体传输
Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
论文作者
论文摘要
高接触电阻是二维（2D）分层半导体的电子设备应用的主要问题之一。 Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor 界面。与原始的WS2 FET相比，广义的Cu原子掺杂剂和局部CU接触装饰都可以提供Schottky -to -Ohmmic接触过渡，这是因为降低的接触电阻降低了1-3个数量级，因此将电子迁移率提高了5-7倍。我们的工作表明，过渡金属的引入可以是一种有效且可靠的技术，可以增强2D TMD FET中的载体运输和设备性能。
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.
