论文标题

低温光发射电子显微镜在铁电域壁上的静电势映射

Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

论文作者

Schaab, J., Shapovalov, K., Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Nemsák, S., Stengel, M., Cano, A., Meier, D.

论文摘要

低温X射线光发射电子显微镜(X-PEEM)用于测量不正确的铁电ER0.99CA0.01MNO3的域壁的电势。通过将X-eem与扫描探针显微镜和理论相结合,我们开发了一个模型,该模型将检测到的X-eem对比与未补偿的结合电荷的出现相关联,从而解释了基于内在的电子域壁性能的图像形成。与先前应用的低温静电力显微镜(EFM)相反,X-Peem很容易区分域壁上的正和负电荷。我们的研究介绍了一种基于X-eem的方法,用于低温静电势映射,促进纳米级的空间分辨率和数据采集时间为0.1-1秒。

Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec.

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