论文标题
引入多粒子Büttiker探针 - 桥接漂移扩散与量子传输之间的缝隙
Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport
论文作者
论文摘要
最先进的工业半导体设备建模基于高效的漂移扩散（DD）模型，其中包括一些纳米版本的量子校正。相比之下，最新的学术量子传输模型基于非平衡绿色功能（NEGF）方法，该方法始终涵盖了所有连贯和不连贯的量子效应。当在NEGF内解决时，光电纳米版的载体重组和发电代表了巨大的数值挑战。在这项工作中，数值有效的Büttiker-probe模型被扩展到NEGF框架中包括电子孔重组和生成。针对最先进的量子校正的DD模型的新的多粒子Büttiker探测方法的基准显示出定量协议，除了明显的隧道和干扰效应的情况下。
State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in optoelectronic nanodevices represent an immense numerical challenge when solved within NEGF. In this work, the numerically efficient Büttiker-probe model is expanded to include electron-hole recombination and generation in the NEGF framework. Benchmarks of the new multiple-particle Büttiker probe method against state-of-the-art quantum-corrected DD models show quantitative agreements except in cases of pronounced tunneling and interference effects.
