论文标题
过渡金属二分法单层中的轨道大厅绝缘阶段
Orbital Hall Insulating Phase in Transition Metal Dichalcogenide Monolayers
论文作者
论文摘要
我们表明，H相过渡金属二分法（TMDS）单层，例如MOS $ _2 $和WSE $ _2 $，是轨道厅绝缘子。他们在半导体的间隙中表现出非常大的轨道霍尔电导率高原，旋转大厅的电导率消失了。我们的结果开辟了使用TMD进行轨道电流注入和轨道扭矩转移的可能性，该轨道扭矩转移超过了旋转轨道设备中的自旋表。 TMD单层中的轨道大厅效应（OHE）即使在没有自旋轨道耦合的情况下也会发生。它可以与异国情调的动量空间dresselhaus样轨道纹理相关，类似于旋转摩托杆锁定的2D Dirac费米，这是由轨道属性和晶格对称性的组合而产生的。
We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterparts in spin-orbitronics devices. The orbital Hall effect (OHE) in TMD monolayers occurs even in the absence of spin-orbit coupling. It can be linked to exotic momentum-space Dresselhaus-like orbital textures, analogous to the spin-momentum locking in 2D Dirac fermions that arise from a combination of orbital attributes and lattice symmetry.
