论文标题

巨大的转变v $ _ {\ rm n} $ n $ _ {\ rm b} $ color Centers in $ h $ bn

Giant shift upon strain on the fluorescence spectrum of V$_{\rm N}$N$_{\rm B}$ color centers in $h$-BN

论文作者

Li, Song, Chou, Jyh-Pin, Hu, Alice, Plenio, Martin B., Udvarhelyi, Péter, Thiering, Gergő, Abdi, Mehdi, Gali, Adam

论文摘要

我们研究六角形氮化硼($ H $ -bn)中氮的抗固定石对物理特性的影响,这是一个颜色中心,可以用作二维材料中的量子位。通过小组理论和AB-Initio分析,我们表明,强电子偶联在该颜色中心的光学激活中起关键作用。我们发现,在施加典型的$ h $ bn样品的菌株时,发现氮抗溶剂对脱位对缺陷的零孔子线(ZPL)发射的巨大变化。我们的结果为对具有相似光学特性但广泛分散的ZPL波长的量子发射器的实验观察提供了合理的解释,并且ZPL对菌株的依赖性依赖性。

We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride ($h$-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab-initio analysis we show that strong electron-phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of $h$-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.

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