论文标题
铬补偿GAAS辐射探测器中的空间电荷形成
Space charge formation in chromium compensated GaAs radiation detectors
论文作者
论文摘要
通过激光诱导的瞬态电流技术研究脉冲和直流偏置，研究了铬补偿的GAAS传感器中的空间电荷形成。在切换偏置后5 ms期间，揭示了DC偏置传感器中带负电荷区域的外观表现出的非标准空间电荷的形成。使用蒙特卡洛模拟电流瞬变，我们确定了增强的电子寿命τ= 150 ns和电子漂移迁移率μd= 3650 cm2/vs。我们基于具有空间可变孔电导率的系统中的快速孔陷阱开发并成功地应用了理论模型。
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime τ = 150 ns and electron drift mobility μd = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trapping in the system with spatially variable hole conductivity.
