论文标题
在紧密结合模型中对隧道静电量子交换门的分析视图
Analytical view on tunnable electrostatic quantum swap gate in tight-binding model
论文作者
论文摘要
在半导体中使用单电子在2个双耦合量子点链中实现的广义静电量交换门以紧密结合的简单模型表示，指定分析结果和数值结果。来自库仑静电排斥的反相关原理在单电子设备中被利用。量子纠缠的形成由分析结果指定和支持。给出了经典图片和量子图片之间的差异。量子结构的几何形状与纠缠动力学之间的相关性以分析方式显示。从2个电子静电相互作用中提取单电子的有效波函数。所提出的结果在低温CMOS量子技术中具有重要意义，该技术具有大规模实施半导体量子计算机的观点。 关键字：静电量子交换门，纠缠，反相关，紧密结合模型，两体波函数，相关 - 通用跨界，2个电子系统的密度矩阵，单电子设备，耦合量子点
Generalized electrostatic quantum swap gate implemented in the chain of 2 double coupled quantum dots using single electron in semiconductor is presented in tight-binding simplistic model specifying both analytic and numerical results. The anticorrelation principle coming from Coulomb electrostatic repulsion is exploited in single electron devices. The formation of quantum entanglement is specified and supported by analytical results. The difference between classical and quantum picture is given. The correlations between geometry of quantum structures and entanglement dynamics are shown in analytical way. Effective wavefunction of single electrons is extracted from 2 electron electrostatic interactions. The presented results have its significance in cryogenic CMOS quantum technologies that gives perspective of implementation of semiconductor quantum computer on massive scale. Keyword: electrostatic quantum swap gate, entanglement, anticorrelation, tight-binding model, two-body wavefunction, correlation-anticorrelation crossover, density matrix of 2 electron system, single electron devices, coupled quantum dots
