论文标题
微波辅助CNOT门的研究
Study of Microwave Assisted CNOT Gate
论文作者
论文摘要
通过应用一系列选择的脉冲面积的脉冲,已经研究了磁性杂质掺杂半导体量子点中的种群演化。通过光激发机制,(J_z =+3/2)中的种群通过(J =+1/2)传导带状态将重量带的重孔状态带到(j_z = -3/2),varance频段状态。注射的微波纠缠导带状态。该布置已成功地用于确定量子CNOT操作,并且计算预测CNOT操作的最大保真度为80 \%。
Population evolution in a magnetic impurity doped semiconductor quantum dot has been studied by applying a sequence of pulses of chosen pulse area. By optical excitation mechanism, the population in (J_z=+3/2), heavy hole state of valence band is carried over to (J_z=-3/2), valance band state, via the (J=+1/2) conduction band states. The injected microwaves entangle conduction band states. This arrangement is successfully employed to ascertain quantum CNOT operation, and the calculation predicts maximum fidelity of 80\% for the CNOT operation.