论文标题

具有抗铁磁层间交换偶联的PT/CO/IR多层的高效旋转轨道扭矩

Highly efficient spin orbit torque in Pt/Co/Ir multilayers with antiferromagnetic interlayer exchange coupling

论文作者

Ishikuro, Yuto, Kawaguchi, Masashi, Taniguchi, Tomohiro, Hayashi, Masamitsu

论文摘要

我们已经研究了PT/CO/IR多层的旋转轨道扭矩(SOT),具有3个单位结构的重复。由于该系统表现出具有不同IR层厚度的振荡性层间交换耦合(IEC),因此我们比较当CO层以铁磁性和抗磁性耦合时,我们比较了膜的SOT。使用当前诱导的异常霍尔电阻磁滞回路评估SOT。相对较厚的PT层用作多层的种子层,用于通过自旋大厅效应生成旋转电流。在没有抗磁磁耦合的情况下,SOT与所施加的电流密度相对恒定,并且相应的自旋扭矩效率(即有效的旋转霍尔角)为$ \ sim $ 0.09,与先前的报告一致。相反,对于具有抗铁磁耦合的膜,SOT随着电流密度而增加,最终饱和。饱和度的SOT比没有抗磁磁耦合的$ \ sim $ 15 $ 15。如果我们假设由于抗磁磁耦合,自旋扭矩效率为$ \ sim $ 5倍$ 5倍$ 5倍。基于Landau Lifshitz Gilbert方程的模型计算表明,抗铁磁耦合的存在可以增加SOT,但在这种情况下,增强程度限制为1.2-1.4。因此,我们认为还有其他SOT来源,可能是在界面上,这可能是未补偿的合成抗Ferromagnet(SAF)多层的高效SOT。

We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films when the Co layers are coupled ferromagnetically and antiferromagnetically. SOT is evaluated using current induced shift of the anomalous Hall resistance hysteresis loops. A relatively thick Pt layer, serving as a seed layer to the multilayer, is used to generate spin current via the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is constant against the applied current density and the corresponding spin torque efficiency (i.e. the effective spin Hall angle) is $\sim$0.09, in agreement with previous reports. In contrast, for films with antiferromagnetic coupling, the SOT increases with the applied current density and eventually saturates. The SOT at saturation is a factor of $\sim$15 larger than that without the antiferromagnetic coupling. The spin torque efficiency is $\sim$5 times larger if we assume the net total magnetization is reduced by a factor of 3 due to the antiferromagnetic coupling. Model calculations based on the Landau Lifshitz Gilbert equation show that the presence of antiferromagnetic coupling can increase the SOT but the degree of enhancement is limited, in this case, to a factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at the interfaces, which may account for the highly efficient SOT in the uncompensated synthetic anti-ferromagnet (SAF) multilayers.

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