论文标题
完整的应变映射的纳米片陶瓷二硫化物
Complete Strain Mapping of Nanosheets of Tantalum Disulfide
论文作者
论文摘要
准二维（准2D）材料对将来的电子设备有希望，因为它们具有独特的带状结构，从而在所有三个维度中都会导致对晶体菌株敏感的电子和机械性能。量化晶体应变是将其与设备的性能相关联的先决条件，并要求高分辨率但在空间上解决快速表征方法。在这里，我们表明，使用蝇can纳米X射线衍射，我们可以在1T-TAS2的准2D片上，在空间范围内，在空间范围内，在空间范围内达到低于80 nm的空间分辨率，可以完成低于80 nm的拉伸应变敏感性。通过扫描12keV聚焦的X射线梁跨过并旋转样品，从$ \ sim $ 100 nm厚的1T-TAS2厚片收集了一致的衍射图。我们证明了样品中存在的微米和亚微米大小的“气泡”周围的应变分布可以从这些图像中重建。实验使用了最先进的仪器的状态，并将允许基于准2D材料对薄膜样品和电子设备进行快速且非侵入性的应变映射。
Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $μ$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.
