论文标题
金属/纳米孔GAN分布的Bragg反射器腔中的TAMM等离子体用于主动和被动光电子
Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics
论文作者
论文摘要
我们研究了金属/半导体分布的布拉格反射器（DBR）界面中的TAMM等离子体（TP）模式。具有优化厚度的薄Ag（银）层（来自模拟的〜55 nm），沉积在使用二色半极度GAN底物上的电化学蚀刻制造的纳米孔GAN DBR上。在AG沉积之前和之后比较了DBR的反射率光谱以及沉积在GAN上的毯子Ag层的反射率。结果表明在AG沉积后结构上存在〜455 nm处的TP模式。活性介质也可以在光电和光子学的模式下容纳。此外，仿真结果预测了TP模式波长对环境的敏感性（当将孔中的孔中的环境从n = 1变为异丙醇n = 1.3时，〜4 nm偏移），这表明将纳米孔GAN基的TP结构应用于光学传感。
We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The results indicate presence of a TP mode at ~ 455 nm on the structure after the Ag deposition. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (~ 4 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3) , suggesting an application of the nanoporous GaN based TP structure for optical sensing.
