论文标题
应变介导的对称断裂开关，垂直磁各向异性
Strain-mediated Symmetry Breaking Switch with Perpendicular Magnetic Anisotropy
论文作者
论文摘要
具有垂直磁各向异性（PMA）的磁开关是一种有前途的方法，用于控制多种应用（例如磁性隧道连接和磁性记忆）的磁化方法。但是，不连贯发生在开关过程中，并降低磁性位的开关频率。对称经纪可以帮助解决这个问题。在这里，我们提出了一种用于对称型的无现场方法，然后提高磁化的开关速度。这里介绍了一种具有几何不对称的应变介导的方法。在这项工作中，我们构建了一个有限的元件模型，该模型包括一个50纳米直径的纳米磁性，在50纳米厚PZT（PBY [ZRXTI1-X] O3）薄膜的顶部的厚度各不相同。结果表明，在相同的能耗下，比对称性PMA开关（0.85纳秒至0.29纳米秒）快66％。最后，我们通过计算能量曲线来探索不同厚度纳米型的对称型的机理。
Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promising method for controlling magnetization in several applications like magnetic tunnel junction and magnetic memory. However, incoherence happens during the switch process and lower the switch frequency of the magnetic bits. Symmetry broking can help solve this problem. Here, we present a field-free method for the symmetry broking and then increase the switch speed of the magnetization. A strain-mediated method with geometric asymmetry is presented here. In this work, we build a finite element model that consists a 50 nanometer diameter nanodisk with a varied thickness on the top of a 50 nanometer thick PZT (Pby[ZrxTi1-x]O3) thin film. The results show a 66% faster switch than symmetry PMA switching (0.85 nanosecond to 0.29 nanosecond) under same energy consumption. Finally, we explore the mechanism of the symmetry broking of varying thickness nanodot with calculating the energy profile.
