论文标题

单层MOS $ _2 $中的嵌套和激子光谱

Band nesting and exciton spectrum in monolayer MoS$_2$

论文作者

Bieniek, Maciej, Szulakowska, Ludmiła, Hawrylak, Paweł

论文摘要

我们在这里讨论带嵌套和拓扑对单层MOS $ _2 $(一种原型过渡金属二进制二进制材料的单层)的影响。我们使用基于AB的基于AB的紧密结合模型来解决单个粒子状态,其中包含金属$ D $和硫$ P $轨道。金属轨道的贡献从$ K $演变为$γ$点会导致传导率嵌套,并在传导频段中以$ q $点为$ q $点。每个$ k $ valley有三个$ q $ punima。我们准确地解决了包括$ k $和$ Q $点的伯特盐量表方程,并获得了地面和激发的激动人心的状态。我们确定电子孔单个颗粒能的影响,包括带嵌套,直接和交换筛选的库仑电子孔相互作用以及产生的激子光谱上产生的拓扑磁矩。控制不同贡献的能力以及对地面和激发激发激发态态的准确计算的能力,可以确定不同贡献的重要性,并与有效质量和$ k \ cdot p $ p $ sportive dirac fermion模型进行比较。

We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based tight-binding model containing metal $d$ and sulfur $p$ orbitals. The metal orbitals contribution evolving from $K$ to $Γ$ points results in conduction-valence band nesting and a set of second minima at $Q$ points in the conduction band. There are three $Q$ minima for each $K$ valley. We accurately solve the Bethe-Salpeter equation including both $K$ and $Q$ points and obtain ground and excited exciton states. We determine the effects of the electron-hole single particle energies including band nesting, direct and exchange screened Coulomb electron-hole interactions and resulting topological magnetic moments on the exciton spectrum. The ability to control different contributions combined with accurate calculations of the ground and excited exciton states allows for the determination of the importance of different contributions and a comparison with effective mass and $k\cdot p$ massive Dirac fermion models.

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