论文标题
Si底物上高密度GESE三角纳米板阵列的合成和温度依赖的光致发光
Synthesis and temperature-dependent photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates
论文作者
论文摘要
我们使用简单的热蒸发方法在SI（111）底物上种植了具有高密度（3.82e+6 / mm2）的三角形纳米板阵列（TNA）。单个三角纳米板的厚度和三侧长度分别通过原子力显微镜（AFM）统计估算为44 nm，365 nm，458 nm和605 nm。透射电子显微镜（TEM）图像和X射线衍射（XRD）模式表明TNA由单晶GESE相组成。 TEM图像和拉曼振动模式也揭示了晶格中与SE相关的缺陷。与以前报道的GESE化合物不同，GESE TNA表现出温度依赖性的光致发光（PL）。此外，以前未报道的44 nm厚的TNA的PL峰（1.25 eV）在5 K处的厚度为GESE单层（1.5 nm）和薄膜（400 nm）之间的间隙，揭示了PL峰与GESE的厚度之间的密切关系。 SI底物上TNA的高密度结构和温度依赖性PL可能可用于温度可控的半导体纳米版。
We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82E+6 / mm2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy (AFM) as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and X-ray diffraction (XRD) patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). In addition, not previously reported PL peak (1.25 eV) of the 44 nm thick TNAs at 5 K was in the gaps between those of GeSe monolayers (1.5 nm) and thin films (400 nm), revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.
