ISO INTERNATIONAL STANDARD 12406 First edition 2010-11-15 Surface chemical analysis Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon Analyse chimique des surfaces Spectrométrie de masse des ions secondaires Dosage de I'arsenic dans le silicium par profilage d'épaisseur Reference number ISO 12406:2010(E) @ ISO 2010 y IHS under lic ted without license from IHS Not for Resale ISO 12406:2010(E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance with Adobe's licensing policy, this file may be printed or viewed but shall not be edited unless the typefaces which are embedded are licensed to and installed on the computer performing the editing. In accepts no liability in this area. Adobe is a trademark of Adobe Systems Incorporated. Details of the software products used to create this PDF file can be found in the General Info relative to the file; the PDF-creation parameters were optimized for printing. Every care has been taken to ensure that the file is suitable for use by Iso member bodies. In COPYRIGHTPROTECTEDDOCUMENT @ISO2010 All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, IsO's member body in the country of the requester. ISO copyright office Case postale 56. CH-1211 Geneva 20 Tel. + 41 22 749 01 11 Fax + 41 22 749 09 47 E-mail
[email protected] Web www.iso.org Published in Switzerland @ ISO 2010 - All rights reserved I without license from IHS Not for Resale ISO 12406:2010(E) Contents Page Foreword Introduction 1 Scope 2 Normative references 3 Terms and definitions 4 Symbols and abbreviated terms... 5 Principle 6 Reference materials ... 6.1 Reference materials for calibration of relative-sensitivity factors . 6.2 Reference materials for calibration of depth scale... < Apparatus. 7.1 Secondary-ionmassspectromete 7.2 Stylusprofilometer. 7.3 Optical interferometer... 8 Specimen. 9 Procedures.. 9.1 Adjustmentofsecondary-ionmassspectrometer 3 9.2 Optimizing the secondary-ion mass spectrometer settings. 9.3 Specimen introduction..... 9.4 Detected ions.. 9.5 Measurement of test specimen. 9.6 Calibration... 10 Expression of results .6 11 Test report Annex A (informative) Report of round robin test of depth profiling of arsenic in silicon ... Annex B (normative) Procedures for the depth profiling of NIST SRM 2134, Bibliography. Copyright International Organization for Standardizalon ghts reserved ii se from IHS Not for Resale
ISO 12406 2010 Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
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